Homework #9 Geant4 Simulations for Photoelectric Effect in Aluminum
نویسنده
چکیده
Geant4 simulations were performed to determine electron binding energies in aluminum using two different implementation of the photoelectric effect: G4PotoElectricEffect and G4LowEnergyPhotoElectric. The incident photon energies used in the simulation were 20 eV, 100 eV, 1 keV and 2 keV. The binding energies of the knocked out electrons were calculated as a difference between photon incident energy and the kinetic energy of the electron after the photoelectric event. The obtained results for each model were compared with each other as well as the published experimental data. It was demonstrated that the G4LowEnergyPhotoElectric model describes the photoelectric effect much more realistically than the G4PotoElectricEffect model and matches well with the experimental results.
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